Description

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects and novel electrical transport phenomena due to the reduced size of the devices. In addition, this book describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs. It includes descriptions of the technological challenges and options, including a physically based compact model, that are presented by these devices. It also describes the most advanced models of MuGFET properties based on quantum modeling as well as other MuGFET applications that include advanced circuits and radiation-hard electronic devices.

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